Fabrication of Small Nanowires
I will discuss a versatile template-technique
aimed at the fabrication of nanowires with lateral width below 10 nm.
Employing a MBE grown GaAs/AlGaAs/GaAs sample on whose cleaved, surface we
spin PMMA, electron beam lithography and metal evaporation are used to
define an etching mask followed by selective etching of the GaAs over
AlGaAs. The etching leaves a relief onto which the
nanowire metal is deposited and the metallic etch mask is used to
electrically contact the nanowire. With this technique we have been able
to fabricate a fully functional AuPd wire 40 nm wide and 20 micrometer
long on which we performed magneto-resistance measurements. With more
complex MBE structures, unusual geometries may be realized down the road.
 D. Natelson et al.,Appl. Phys. Lett. 77, 1991-1993 (2000)
A. Bezryadin et al., Nature 404, 971-973 (2000)
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