Stephen W. Teitsworth
Steering most probable escape paths by varying relative noise intensities.
Physical review letters (2014)
On the Origin of Power-Law Probability Distributions Associated with Noise-Induced Current Switching in Semiconductor Superlattices
to be submitted to Physical Review B (2014)
Measurement of anomalous scaling behavior associated with noise-induced current switching in a tunnel diode
Dependence of switching path distributions on relative noise intensities in a model of electrical conduction in a tunnel diode circuit
Steering Most Probable Escape Paths by Varying Relative Noise Intensities
Physical Review Letters (2014)
Steering most probable escape paths by varying relative noise intensities
An Averaging Method for Tunnel Diode Circuit Behavior
to be submitted to IEEE Journal of Electron Devices (2012)
Shot Noise Amplification in Weakly-Coupled Semiconductor Superlattices
Rare transition events in non-equilibrium systems with state-dependent noise: application to stochastic current switching in semiconductor superlattices
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Prof. Stephen W. Teitsworth's research centers on experimental, computational, and theoretical studies of deterministic and stochastic nonlinear electronic transport in nanoscale systems. Three particular areas of current interest are: 1) stochastic nonlinear electronic transport phenomena in semiconductor superlattices and tunnel diode arrays; 2) complex bifurcations associated with the deterministic dynamics of electronic transport in negative differential resistance systems; and 3) strategies for stabilizing negative differential resistance systems against the formation of space-charge waves.
A.M. - Harvard University
BS - Stanford University
Controllable bifurcation processes in undoped, photoexcited GaAs/AlAs superlattices
In Proceedings of the 5th experimental chaos conference edited by M. Ding et al.. ; : .
Quantum chaos effects in mechanical wave systems
In Proceedings of the 16th Sitges conference edited by D. Reguera et al.. ; : .