Compressive and Adaptive Millimeter-wave SAR
Aluminum for Plasmonics
ACS Nano (2013)
UV Plasmonic Behavior of Various Metal Nanoparticles in the Near-and Far-Field Regimes: Geometry and Substrate Effects
The Journal of Physical Chemistry C (2013)
Terahertz photovoltaic detection of cyclotron resonance in the regime of radiation-induced magnetoresistance oscillations
Physical Review B (Condensed Matter and Materials Physics) (2013)
Localized excitons mediate defect emission in ZnO powders
Journal of Applied Physics (2013)
The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities
Applied Physics Letters (2013)
- 1 of 12
- next ›
Comparative Reconstructions of THz Spectroscopic Imaging for Non- Destructive Testing and Biomedical Imaging
In Terahertz Physics, Devices, and Systems VI: Advanced Applications in Industry and Defense edited by . ; pp. 83630W--83630W--10. : SPIE.
Nanotechnology Research and Development for Military and Industrial Applications
In Nanosensors, Biosensors, and Info-Tech Sensors and Systems 2011 edited by . ; pp. 798002--798002--17. : SPIE.
Infrared/Terahertz Double Resonance for Chemical Remote Sensing: Signatures and Performance Predictions
In Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense edited by . ; pp. 76710F--76710F--12. : SPIE.
Instrumentation for Beam Profiling in the Terahertz Regime
In Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense edited by . ; pp. 76710J--76710J--12. : SPIE.
Carrier dynamics and photoexcited emission efficiency of ZnO:Zn phosphor powders
In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIII edited by . ; pp. 721405--721405--12. : SPIE.
Effect of ion damage on optical properties of ZnO films grown by plasma-assisted MBE
In Zinc Oxide Materials and Devices III edited by . ; pp. 68950Y--68950Y--8. : SPIE.
A visible transparent electroluminescent europium doped gallium oxide device
In Materials Science And Engineering B-Solid State Materials For Advanced Technology edited by . ; pp. 252--255. : .
Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD
In Gallium Nitride Materials and Devices II edited by . ; pp. 647303--647303--7. : SPIE.
Carrier relaxation and stimulated emission in ZnO nanorods grown by catalyst-assisted vapor transport on various substrates
In Zinc Oxide Materials and Devices II edited by . ; pp. 64741M--64741M--7. : SPIE.
Low dislocation density GaN grown by MOCVD with SiNx nano-network
In Gallium Nitride Materials and Devices II edited by . ; pp. 647304--647304--8. : SPIE.
- 1 of 2
- next ›